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A New 1/f Noise Parameter in Bipolar Transistor

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
1990年04期
Page:
12-17
Research Field:
Publishing date:

Info

Title:
A New 1/f Noise Parameter in Bipolar Transistor
Author(s):
Fang Ruzhang
Department of Optical and Electronic
Keywords:
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PACS:
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DOI:
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Abstract:
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References:

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Memo

Memo:
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Last Update: 2013-04-29