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Simulated Calculation of Temperature Rise in Si Irratiated by High power Laser(PDF)

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
1998年03期
Page:
80-83
Research Field:
Publishing date:

Info

Title:
Simulated Calculation of Temperature Rise in Si Irratiated by High power Laser
Author(s):
Shen Zhonghua Lu Jian Ni Xiaowu
School of Sciences, NUST, Nanjing 210094
Keywords:
laser heating semiconductor mater ials tw o dimension models
PACS:
TN304.120.1,TN241
DOI:
-
Abstract:
Considering the variety of thermal parameters o f the silico n material and the spat ial pr ofile o f incident laser, the ax ial and radial dist ribut ion of temperature of Si is obtained using a 2-D mo del of heat conduct ion, the relat io n between the t ime for the surface reaching melt ing point and the pow er density of the laser is also g iven and the result s are compar ed w ith tho se obtained by using 1-D model .

References:

1 倪晓武, 陆建, 贺安之. 激光对电荷耦合器件的硬破坏机理研究. 物理学报, 1994, 43( 11) :1795~1802
2 陆建, 倪晓武, 罗必凯. 激光对PIN 结光电二极管热破坏机理的研究. 中国激光, 1996, A23( 1) : 75~79
3  蒋志平, 陆启生, 刘泽金. 激光辐照InSb( PV) 型探测器的温升计算. 强激光与粒子束,1990, 2( 2) : 247~251
4 Chan C L, Mazum der J. One-dimensional st eady-state mo del for damag e by vapor ization and liquid expulsio n due t o laser-mater ial inter act ion. J Appl Phy s, 1987, 62 ( 11) : 4597~4586
5 叶良修. 半导体物理. 北京: 高等教育出版社, 1987. 581

Memo

Memo:
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Last Update: 2013-03-29