|Table of Contents|

Multi Pinned Phase Mode in Electron Multiplying Charge Coupled Devices

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
2008年05期
Page:
599-603
Research Field:
Publishing date:

Info

Title:
Multi Pinned Phase Mode in Electron Multiplying Charge Coupled Devices
Author(s):
ZHOU Bei-beiCHEN QianZHANG Wen-wen
School of Electronic Engineering and Optoelectronics Technology,NUST,Nanjing 210094,China
Keywords:
electron multiplying charge coupled device multi pinned phase mode interface state dark currents
PACS:
TN386.5
DOI:
-
Abstract:
In the low light level condition,the dark current noise is enlarged with the signal in the multiplying registers of electron multiplying charge coupled devices(EMCCDs),and the signal is lost in the dark current.To solve the problem,a multi pinned phase(MPP) mode is introduced into the EMCCD.With the negative bias applied on the gates,the silicon-silicon dioxide interface is populated by holes,the hopping conduction process is suppressed,and the dark current generation rate is much reduced.The results show that,when temperature is 300 K,the dark current of EMCCD is 0.021 3 nA/cm2 in MPP mode operation and 1.79 nA/cm2 in non-MPP mode.Dark current is evidently curtailed by the introdution of the MPP mode into the EMCCD.The detecting sensitivity and signal to noise ratio of low light level imaging system is also significantly improved.

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Last Update: 2012-12-19