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Influencing Factors of Image Uniformity Affected by Output Probability Distribution of Charge Carrier Multiplier


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Influencing Factors of Image Uniformity Affected by Output Probability Distribution of Charge Carrier Multiplier
ZHOU Bei-beiCHEN QianHE Wei-ji
School of Electronic Engineering and Optoelectronic Technology,NUST,Nanjing 210094,China
electron multiplying charge-coupled device charge carrier multiplier structure probability generating function probability distribution function
The output probability distribution of charge carrier multiplier(CCM) structure from the electron multiplying charge-coupled device(EMCCD) and its influence on image uniformity are studied.The probability model is established for the CCM structure of EMCCD.And based on the probability generating function(PGF) and its properties,the probability distribution function(PDF) of multiple CCM stages is deduced and its application in improving image uniformity is also discussed.The simulation and the experimental results show that: when the input signal is fixed,the higher the multiplication gain is,the poorer the output image uniformity is;when the multiplication gain is fixed,the stronger the input signal is,the poorer the output image uniformity is.As a conclusion,the image uniformity of the EMCCD under the low light level performs better.The output image uniformity is improved by appropriately decreasing multiplication gain.


[ 1] LantzE, Blanchet J L, Furfaro L, et a.l Mult-i ima-ging andBayesianestimation for photon counting with EMCCDs[ J]. MonthlyNoticesof theRoyalAstronom-icalSociety, 2008, 386: 2262-2270.
[ 2] 何伟基,陈钱, 徐融,等. 基于Z域变换的CCM电荷传输模型研究[ J]. 电子学报, 2008, 6( 36): 1140 -1143.
[ 3] HynecekJ. CCM: a newlow-noise charge carriermu-l tiplier suitable for detection of charge in small pixel CCDimage sensors[ J]. IEEETransonElectronDe-vices, 1992, 39(8): 1972-1975.
[ 4] 何伟基, 陈钱,屈惠明,等. 电子倍增CCD的电荷倍增特性研究[ J]. 光学学报, 2008, 28( 6): 1161 -1166.
[ 5] 周蓓蓓, 陈钱,张闻文. 电子倍增电荷耦合器件中多针相工作模式[ J]. 南京理工大学学报(自然科学版), 2008, 32( 5): 599-603.
[ 6] MadanSK, BhaumikB, Vasi JM. Experimental ob-servationof avalanchemultiplication incharge-coupled devices[ J]. IEEETransElectronDevices, 1983, ED -30( 6): 694-699.
[ 7] Hynecek J. Impactron: a newsolidstate image inten-sifier[ J]. IEEETransonElectronDevices, 2001, 48 (10): 2238-2241.
[ 8] JerramP, Pool P, BellR, et a.l The LLLCCD: low light imagingwithout the need for an intensifier[ J]. SPIE, 2001, 4306: 178-186.
[ 9] BasdenAG, HaniffCA, MackayCD. Photoncoun-t ing strategieswith low light level CCDs[ J]. Monthly Noticesof theRoyalAstronomicalSociety, 2003, 345: 985-991.
[ 10] Hynecek J. Excess noise andother important charac-teristicsof lowlight level imagingusing chargemultip-l ying CCDs[ J]. IEEETrans on Electron Devices, 2003, 50( 1): 239- 245.
[ 11] 苏学征. EMCCD技术)) ) 单光子水平的成像探测 [ J]. 现代科学仪器, 2005, 2: 51- 53.
[ 12] 刘继琨. 固体摄象器件的物理基础[M]. 成都: 电子科技大学出版社, 1989. 60-69.
[ 13] 陈迎娟,张之江,张智强. CCD像素响应不均匀性的校正方法[ J]. 光学精密工程, 2004, 12(2): 216-220.


Last Update: 2012-11-19