|Table of Contents|

Research of Semiconductor Pulsed Laser Spot Shaping Method

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
2010年05期
Page:
592-595
Research Field:
Publishing date:

Info

Title:
Research of Semiconductor Pulsed Laser Spot Shaping Method
Author(s):
ZHANG HeGUO JingZHANG Xiang-jin
School of Mechanical Engineering,NUST,Nanjing 210094,China
Keywords:
laser proximity fuzes pulsed laser spots shaping methods collimation systems lens groups
PACS:
TJ434
DOI:
-
Abstract:
This paper investigates the problems of the big laser spot and close detection range in the miniaturization laser emission system of the proximity fuze.By discussing and analyzing the characteristics of the emitting beam of the semiconductor laser as well as the pulsed laser ranging performance,the transmitting lens of the laser ranging-finder is designed to shape the laser beam.The simulation results indicate that the laser beam divergence is compressed to 1.5 mrad,the far field spot is a circular symmetry shape and the peak irradiance increases to 41.04 W/cm2 after collimation.The optic collimation system significantly improves the detection range of the miniature low-power system from 8 m to 21 m.

References:

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Memo

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Last Update: 2012-11-02