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Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices


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Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices
School of Chemical Engineering,NUST,Nanjing 210094,China
explosive devicessemiconductor bridgeselectrostatic dischargecurrent densityJouleheatingscanning electron microscopeenergy dispersive X-ray analysis
TJ450. 1;O441. 1
In order to study the effect mechanism of the electrostatic discharge(ESD)on semiconductorbridge(SCB)explosive devices,the SCB explosive devices are tested in the ESD experiment accordingto the electrostatic characteristics,and the electro-thermal analysis model of the capacitor discharge isestablished. The ANSYS software is used to simulate the temperature field of SCB under theelectrostatic discharge. The results of the scanning electron microscope and energy dispersive X-rayshow that the current density of V-type angles is maximum and the temperature is the highest. The SCBis affected by Joule heating,and the sharp corners of the bridge are vapoured and damaged firstly. Theresults can provide references for the anti-electrostatic design of SCB explosive devices.


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Last Update: 2012-11-26