|Table of Contents|

Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
2012年05期
Page:
824-
Research Field:
Publishing date:

Info

Title:
Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices
Author(s):
CHEN FeiZHOU BinQIN Zhi-ChunSHEN Rui-qi
School of Chemical Engineering,NUST,Nanjing 210094,China
Keywords:
explosive devicessemiconductor bridgeselectrostatic dischargecurrent densityJouleheatingscanning electron microscopeenergy dispersive X-ray analysis
PACS:
TJ450. 1;O441. 1
DOI:
-
Abstract:
In order to study the effect mechanism of the electrostatic discharge(ESD)on semiconductorbridge(SCB)explosive devices,the SCB explosive devices are tested in the ESD experiment accordingto the electrostatic characteristics,and the electro-thermal analysis model of the capacitor discharge isestablished. The ANSYS software is used to simulate the temperature field of SCB under theelectrostatic discharge. The results of the scanning electron microscope and energy dispersive X-rayshow that the current density of V-type angles is maximum and the temperature is the highest. The SCBis affected by Joule heating,and the sharp corners of the bridge are vapoured and damaged firstly. Theresults can provide references for the anti-electrostatic design of SCB explosive devices.

References:

[1]刘尚合,周万珍,孙秋红. 静电放电电磁脉冲理论建模与作用机理研究进展[ J]. 河北科技大学学报,2005,26(2):87-91.Liu Shanghe,Zhou Wanzhen,Sun Qiuhong. Modeling ofelectrostatic discharge electromagnetism impulse theoryand the development of the study of functionmechanism[J]. Journal of Hebei University of Scienceand Technology,2005,26(2):87-91.
[2] 刘尚合,魏光辉,刘直承,等. 静电理论与防护[M].北京:兵器工业出版社,1999.
[3] 郎永强. 静电安全防护要诀[M]. 北京:机械工业出版社,2007.
[4] 祝逢春,徐振相,陈西武,等. 半导体桥火工品研究新进展[J]. 兵工学报,2003,24(1):106-110.Zhu Fengchun, Xu Zhenxiang, Chen Xiwu, et al.Progress on the semiconductor bridge initiator[J]. ActaArmamentarii,2003,24(1):106-110.
[5] 杨洁,马宏萱,王海. 电火工品防静电结构的研究[J]. 火工品,2003(2):40-43.Yang Jie, Ma Hongxuan, Wang Hai. Study on theantistatic structure of electric initiating device [ J].Initiators and Pyrotechnics,2003(2):40-43.
[6] 陈飞,周彬,秦志春,等. 半导体桥火工品的防静电和防射频技术[J]. 爆破器材,2010,39(3):28-32.Chen Fei, Zhou Bin, Qin Zhichun, et al. Anti-electrostatic and anti-RF technology of semiconductorbridge explosive devices [ J]. Explosive Materials,2010,39(3):28-32.
[7] Kim J D,Jungling K C. Modelling of the current densitydistribution in a heavily doped semiconductor bridge[J]. International Journal of Electronics,1996,80(5):623-628.
[8] Kim J D,Jungling K C,Nam K S,et al. Two-dimensionalmodelling of the current density distribution in a heavilydoped semiconductor resistor[ J]. International Journalof Electronics,1997,82(1):19-26.
[9] Bernardo M T, Martin C F. Voltage-protectedsemiconductor bridge igniter elements[P]. US Patent:6199484 B1,2001-03-13.
[10] Bernardo M T, John A M. Surface-connectablesemiconductor bridge elements and devices includingthe same[P]. US Patent:006054760A,2000-04-25.
[11] GJB5309. 14—2004. 火工品试验方法[S].
[12] ANSYS inc. ANSYS theory manual[M]. USA:StandardsAssociation of Australian Internet Protocol ( SAA IP)Inc,1997.
[13] 阎照文. ANSYS 10. 0 工程电磁分析技术[ M]. 北京:中国水利水电出版社,2006.
[14] 黄昆,韩汝琦. 半导体物理基础[M]. 北京:科学出版社,1979.
[15] 杨贵丽,焦清介. 双V 型半导体桥电阻计算方法研究[J]. 火工品,2009(3):1-5.Yang Guili,Jiao Qingjie. Study on calculation methodfor resistance of double V-shaped semiconductor bridge[J]. Initiators and Pyrotechnics,2009(3):1-5.
[16] 谭伟,高本庆,刘波. 桥丝式电火工品静电发火过程的数值模拟[J]. 火工品,2003(3):1-5.Tan Wei,Gao Benqing,Liu Bo. Numerical simulationof electrostatic firing sequence of bridgewire EED[J].Initiators and Pyrotechnics,2003(3):1-5.

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Last Update: 2012-11-26