|Table of Contents|

Influences of shape and filling material of through silicon via on thermal stress(PDF)

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

Issue:
2018年03期
Page:
364-
Research Field:
Publishing date:

Info

Title:
Influences of shape and filling material of through silicon via on thermal stress
Author(s):
Wei Li 1Lu Xiangning2Guo Yujing1
1. Provincial Experimental Teaching Demonstration Center of Mechanical Engineering, Tangshan College,Tangshan 063000,China; 2.School of Mechanical and Electrical Engineering,Jiangsu Normal University,Xuzhou 221116,China
Keywords:
through silicon via thermal stress finite element analysis copper filling
PACS:
TN305; TG156
DOI:
10.14177/j.cnki.32-1397n.2018.42.03.016
Abstract:
A cylinder through silicon via(TSV)and a circular truncated cone TSV are simulated using finite element analysis to research the influences of shape and filling materials of TSV on the thermodynamic performance of the structure. For the cylinder TSV,the depth to width ratio or the radius of filling copper are changed to analyze the thermal stress; for the circular truncated cone TSV,a radius or the ratio between upper end radius and under end radius are changed to analyze the thermal stress. The simulation results show that the maximum thermal stress appears at the maximum deformation of the cylinder TSV and the circular truncated cone TSV,and the minimum thermal stress appears at the copper filling part; for the cylinder TSV,the greater the depth-to-width radio is,the smaller the thermal stress is,and the bigger the radius of copper filling is,the bigger the thermal stress is; for the circular truncated cone TSV,the bigger the ratio between upper end radius and under end radius is,the bigger the thermal stress is,and as the ratio between upper end radius and under end radius being equal,the thermal stress increases first and then decreases with the end radius increasing.

References:

[1] Lau J H. Recent advances and trends in advanced packaging[J]. Chip Scale Review,2017(5):1-7. [2]张平. 突破物理极限,迈向工艺巅峰——解析英特尔全新10 nm工艺[J]. 微型计算机,2017(31):101-105. Zhang Ping. Breaking through the physical limit and moving towards the peak of the process—analysis of a new Intel 10 nm process[J]. MicroComputer,2017(31):101-105. [3]杨建义,王根成. Si基光子技术发展的特点、机遇与挑战[J]. 中兴通讯技术,2017,23(5):47-51. Yang Jianyi,Wang Gencheng. Features,opportunities and challenges of silicon photonics[J]. ZTE Technology Journal,2017,23(5):47-51. [4]叶钟灵. 纪念摩尔定律50周年(下)[J]. 电子产品世界,2015,22(8):4-7. Ye Zhongling. In memory of Moore’s Law’s 50th anniversary[J]. Outlook of Electronic Technology,2015,22(8):4-7. [5]Tummala R R.SOP:What is it and why?A new microsystem-integration technology paradigm-Moore’s law for system integration of miniaturized convergent systems of the next decade[J].IEEE Transactions of Advanced Packaging,2004,27(2):241-249. [6]魏丽,郭玉静,陆向宁. 基于Hough变换的高精度机器视觉对准系统的研究[J]. 应用光学,2017,38(6):884-889. Wei Li,Guo Yujing,Lu Xiangning. High-precision alignment system of machine vision based on Hough transform[J]. Journal of Applied Optics,2017,38(6):884-889. [7]王明涛,何君. 3D 集成技术在尖端领域的应用及其发展趋势[J]. 半导体技术,2013,38(5):328-332. Wang Mingtao,He Jun. Status and prospects of advanced 3D integration technology[J]. Semiconductor Technology,2013,38(5):328-332. [8]Okoro C,Vanstreels K,Labie R,et al. Influence of annealing conditions on the mechanical and microstruc-tural behavior of electroplated Cu-TSV[J]. Journal of Micromechanics and Microengineering,2010,20(4):1-6. [9]凤瑞,裘安萍,施芹,等. 双质量Si微机械陀螺固有频率温度特性研究[J]. 南京理工大学学报,2013,37(1):94-99. Feng Rui,Qiu Anping,Shi Qin,et al. Temperature characteristic of natural frequency of double-mass silicon micro-mechanical gyroscope[J]. Journal of Nanjing University of Science and Technology,2013,37(1):94-99. [10]Dou Haixiao,Yang Miaomiao,Chen Yanning,et al. Analysis of the structure evolution and crack propagation of Cu-filled TSV after thermal shock test[C]//2017 18th International Conference on Electronic Packaging Technology(ICEPT). Harbin,China:IEEE,2017:611-614 [11]Huang Qiaojian,Lilley C M,Bode M,et al. Surface and size effects on the electrical properties of Cu nanowires[J]. Journal of Applied Physics,2008,104(2):549-552. [12]刘荡. Si通孔热应力对于器件性能的影响的研究[D]. 西安:西安电子科技大学微电子研究所,2015:5-19. [13]陈鹏飞,宿磊,独莉,等. TSV三维集成的缺陷检测技术[J]. 半导体技术,2016,41(1):63-69. Chen Pengfei,Su Lei,Du Li,et al. Defect inspection technologies for TSV based 3D integration[J]. Semiconductor Technology,2016,41(1):63-69.

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Last Update: 2018-06-30