[1]邢素霞,等.非制冷热成像系统偏置电压的数值分析[J].南京理工大学学报(自然科学版),2006,(01):85-88.
　XING Su-xia,ZHANG Jun- ju,et al.Bias Voltage Numerical Analysis of Uncooled Thermal Imaging System[J].Journal of Nanjing University of Science and Technology,2006,(01):85-88.
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非制冷热成像系统偏置电压的数值分析
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《南京理工大学学报》（自然科学版）[ISSN:1005-9830/CN:32-1397/N]

卷:
期数:
2006年01期
页码:
85-88
栏目:
出版日期:
2006-02-28

文章信息/Info

Title:
Bias Voltage Numerical Analysis of Uncooled Thermal Imaging System
作者:
邢素霞1;  2 ;  张俊举1;  孙恋君1;  常本康1 ;  钱芸生1
1. 南京理工大学电子工程与光电技术学院, 江苏南京210094; 2. 北京工商大学信息工程学院, 北京100037
Author(s):
XING Su-xia1;  2;  ZHANG Jun- ju1;  SUN Lian- jun1;  CHANG Ben-kang1;  QIAN Yun-sheng1
1. School of Electronic Engineering and Optoelectronic Technology,NUST, Nanjing 210094, China; 2. School of Information Engineering, Beijing Technology and Business University, Beijing 100037, China
关键词:
热成像;  偏置电压;  噪声等效温差;  品质因子
Keywords:
thermal imaging;  bias voltage;  noise equivalent temperature difference;  quality factor
分类号:
TN219
摘要:
在微测辐射热计理论分析的基础上,利用数值计算的方法讨论了偏置电压与噪声、噪声等效温差(NETD)及探测率D*性能参数的关系,确定了微测辐射热计最佳偏置电压范围在1.0~4.0 V,在该范围内可以获取67.7~41.1 mK的NETD,6.1×109~1.15×1010cmHz1/2/W的探测率,品质因子达到2.6~1.4。在1.0~4.0 V的偏置电压范围内,探测器的性能可达到最优化。
Abstract:
Based on the theoret ical analysis of a microbolometer, the relationship of the bias voltage with noise, noise equivalent temperature difference ( NETD) and detectivity D* was discussed by a numerical calculation method. The best bias voltage of microbolometer ranges from 1. 0 to 4. 0 V, between which the NETD ranges from 67. 7 to 41. 1mK, the detectivity ( D* ) ranges from 6. 1 @ 109 to 1. 15 @ 1010 cmHz1/ 2/ W , and the quality factor ( Q ) ranges from 1. 5 to 1. 21. In the 110 to 410 V bias voltage ranges, the detector. s performance can be opt imized.

参考文献/References:

[ 1] Gonz?Lez F J, Abde-l Rahman M, Boreman G D, Antennacoupled VOx thin-film microbolometer array [ J] .Microvave and optical technology letters, 2003, 38( 3) : 235- 237.
[ 2] Xing S X, Cheng H, Chang B K, et al. Miniaturized design for drive circuits of 320 @ 240 uncooled infrared focal plane array[ J] . SPIE, 2003, 5204: 524- 531.
[ 3] Wood R A. Monolithic silicon microbolometer arrays [ J] . Semiconductors and Semimetals. 1996, 47: 45- 120.
[ 4] Paul W K. Principles of uncooled infrared focal plane arrays[ J] . Semiconductors and Semimetals, 1996, 47: 17- 44.
[ 5] 邢素霞. 非制冷红外热成像系统研究[ D] . 南京: 南 京理工大学电子工程与光电技术学院, 2005.
[ 6] Mottin E, Martin J L, Ouvrier- buffet J L, et al. Enhanced amorphous silicon technology for 320@ 240 microbolometer arrays with a pitch of 35 Lm [ J] . SPIE, 2001, 4369: 250- 256.
[ 7] Murphy R, Kohin M. Recent developments in uncooled IR technology [ J] . SPIE, 2000, 4028: 12- 16.

相似文献/References:

[1]胡江华,周建勋,张保民.热成像系统MRTD测量的主、客观方法研究[J].南京理工大学学报(自然科学版),1996,(01):43.
　Hu Jianghua,Zhou Jianxun,Zhang Baomin.Analysis of Subjective and Objective Methods for Measuring MRTD of Thermal Imaging System[J].Journal of Nanjing University of Science and Technology,1996,(01):43.

备注/Memo

备注/Memo:
作者简介: 邢素霞( 1975- ) , 女, 山东单县人, 讲师, 博士, 主要研究方向: 光电子信息, E-mail: xingsuxia@ 163. com。
更新日期/Last Update: 2006-02-28