[1]陈飞,周彬,秦志春,等.静电放电对SCB 起爆装置作用的数值模拟及实验研究[J].南京理工大学学报(自然科学版),2012,36(05):824.
 CHEN Fei,ZHOU Bin,QIN Zhi-Chun,et al.Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices[J].Journal of Nanjing University of Science and Technology,2012,36(05):824.
点击复制

静电放电对SCB 起爆装置作用的数值模拟及实验研究
分享到:

《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

卷:
36卷
期数:
2012年05期
页码:
824
栏目:
出版日期:
2012-10-31

文章信息/Info

Title:
Simulation and Experiment of Effect of Electrostatic Dischargeon SCB Explosive Devices
作者:
陈飞周彬秦志春沈瑞琪
南京理工大学化工学院,江苏南京210094
Author(s):
CHEN FeiZHOU BinQIN Zhi-ChunSHEN Rui-qi
School of Chemical Engineering,NUST,Nanjing 210094,China
关键词:
起爆装置半导体桥静电放电电流密度焦耳热扫描电镜X 射线能谱分析
Keywords:
explosive devicessemiconductor bridgeselectrostatic dischargecurrent densityJouleheatingscanning electron microscopeenergy dispersive X-ray analysis
分类号:
TJ450. 1;O441. 1
摘要:
为了研究静电放电对半导体桥(SCB) 起爆装置的作用机理,根据静电作用的特点,对SCB 起爆装置进行静电放电实验,建立了电容放电的电-热分析模型,利用有限元分析软件ANSYS 对静电作用过程的温度场进行模拟仿真。扫描电镜观测和X 射线能谱分析可知,半导体桥的尖角处电流密度最大,温度最高;静电通过焦耳热效应作用于SCB 起爆装置,使得桥的尖角区域最先汽化损伤。研究结果可为SCB 起爆装置的抗静电危害设计提供参考。
Abstract:
In order to study the effect mechanism of the electrostatic discharge(ESD)on semiconductorbridge(SCB)explosive devices,the SCB explosive devices are tested in the ESD experiment accordingto the electrostatic characteristics,and the electro-thermal analysis model of the capacitor discharge isestablished. The ANSYS software is used to simulate the temperature field of SCB under theelectrostatic discharge. The results of the scanning electron microscope and energy dispersive X-rayshow that the current density of V-type angles is maximum and the temperature is the highest. The SCBis affected by Joule heating,and the sharp corners of the bridge are vapoured and damaged firstly. Theresults can provide references for the anti-electrostatic design of SCB explosive devices.

参考文献/References:

[1]刘尚合,周万珍,孙秋红. 静电放电电磁脉冲理论建模与作用机理研究进展[ J]. 河北科技大学学报,2005,26(2):87-91.Liu Shanghe,Zhou Wanzhen,Sun Qiuhong. Modeling ofelectrostatic discharge electromagnetism impulse theoryand the development of the study of functionmechanism[J]. Journal of Hebei University of Scienceand Technology,2005,26(2):87-91.
[2] 刘尚合,魏光辉,刘直承,等. 静电理论与防护[M].北京:兵器工业出版社,1999.
[3] 郎永强. 静电安全防护要诀[M]. 北京:机械工业出版社,2007.
[4] 祝逢春,徐振相,陈西武,等. 半导体桥火工品研究新进展[J]. 兵工学报,2003,24(1):106-110.Zhu Fengchun, Xu Zhenxiang, Chen Xiwu, et al.Progress on the semiconductor bridge initiator[J]. ActaArmamentarii,2003,24(1):106-110.
[5] 杨洁,马宏萱,王海. 电火工品防静电结构的研究[J]. 火工品,2003(2):40-43.Yang Jie, Ma Hongxuan, Wang Hai. Study on theantistatic structure of electric initiating device [ J].Initiators and Pyrotechnics,2003(2):40-43.
[6] 陈飞,周彬,秦志春,等. 半导体桥火工品的防静电和防射频技术[J]. 爆破器材,2010,39(3):28-32.Chen Fei, Zhou Bin, Qin Zhichun, et al. Anti-electrostatic and anti-RF technology of semiconductorbridge explosive devices [ J]. Explosive Materials,2010,39(3):28-32.
[7] Kim J D,Jungling K C. Modelling of the current densitydistribution in a heavily doped semiconductor bridge[J]. International Journal of Electronics,1996,80(5):623-628.
[8] Kim J D,Jungling K C,Nam K S,et al. Two-dimensionalmodelling of the current density distribution in a heavilydoped semiconductor resistor[ J]. International Journalof Electronics,1997,82(1):19-26.
[9] Bernardo M T, Martin C F. Voltage-protectedsemiconductor bridge igniter elements[P]. US Patent:6199484 B1,2001-03-13.
[10] Bernardo M T, John A M. Surface-connectablesemiconductor bridge elements and devices includingthe same[P]. US Patent:006054760A,2000-04-25.
[11] GJB5309. 14—2004. 火工品试验方法[S].
[12] ANSYS inc. ANSYS theory manual[M]. USA:StandardsAssociation of Australian Internet Protocol ( SAA IP)Inc,1997.
[13] 阎照文. ANSYS 10. 0 工程电磁分析技术[ M]. 北京:中国水利水电出版社,2006.
[14] 黄昆,韩汝琦. 半导体物理基础[M]. 北京:科学出版社,1979.
[15] 杨贵丽,焦清介. 双V 型半导体桥电阻计算方法研究[J]. 火工品,2009(3):1-5.Yang Guili,Jiao Qingjie. Study on calculation methodfor resistance of double V-shaped semiconductor bridge[J]. Initiators and Pyrotechnics,2009(3):1-5.
[16] 谭伟,高本庆,刘波. 桥丝式电火工品静电发火过程的数值模拟[J]. 火工品,2003(3):1-5.Tan Wei,Gao Benqing,Liu Bo. Numerical simulationof electrostatic firing sequence of bridgewire EED[J].Initiators and Pyrotechnics,2003(3):1-5.

相似文献/References:

[1]刘明芳,张小兵.半导体桥火工品升温特性研究[J].南京理工大学学报(自然科学版),2010,(02):203.
 LIU Ming-fang,ZHANG Xiao-bing.Temperature-rising Characteristic of Bridge in Semiconductor Bridge[J].Journal of Nanjing University of Science and Technology,2010,(05):203.
[2]周彬,秦志春,毛国强,等.半导体桥长宽比对其发火性能的影响[J].南京理工大学学报(自然科学版),2009,(02):235.
 ZHOU Bin,QIN Zhi-chun,MAO Guo-qiang.Influence of Ratio of Length to Width of Semiconductor Bridge on Its Firing Performance[J].Journal of Nanjing University of Science and Technology,2009,(05):235.
[3]李 勇,贾 昕,王 榴,等.Al/CuO-SCB含能半导体桥电爆和点火性能初探[J].南京理工大学学报(自然科学版),2015,39(05):632.
 Li Yong,Jia Xin,Wang Liu,et al.Investigation on electro-exploding and ignition performance of Al/CuO-SCB energetic semiconductor bridge[J].Journal of Nanjing University of Science and Technology,2015,39(05):632.

备注/Memo

备注/Memo:
收稿日期:2011-05-09修回日期:2012-09-05基金项目:国防“973“项目(613129)作者简介:陈飞(1985-),男,博士生,主要研究方向:半导体桥火工品的防静电、防射频技术,E-mail:chamfly@gmail. com;通讯作者:周彬(1971 -), 女, 副研究员, 主要研究方向: 半导体桥火工品技术, E-mail:zhoubin8266@ sina. com. cn。
更新日期/Last Update: 2012-11-26