[1]张 梁,倪晓武,陆 建.毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量[J].南京理工大学学报(自然科学版),2018,42(02):148.[doi:10.14177/j.cnki.32-1397n.2018.42.02.003]
 Zhang Liang,Ni Xiaowu,Lu Jian.Interferometry measurement of back surface temperature of siliconplate after interaction with millisecond laser[J].Journal of Nanjing University of Science and Technology,2018,42(02):148.[doi:10.14177/j.cnki.32-1397n.2018.42.02.003]
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毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量()
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《南京理工大学学报》(自然科学版)[ISSN:1005-9830/CN:32-1397/N]

卷:
42卷
期数:
2018年02期
页码:
148
栏目:
出版日期:
2018-04-30

文章信息/Info

Title:
Interferometry measurement of back surface temperature of siliconplate after interaction with millisecond laser
文章编号:
1005-9830(2018)02-0148-07
作者:
张 梁倪晓武陆 建
南京理工大学 理学院,江苏 南京 210094
Author(s):
Zhang LiangNi XiaowuLu Jian
School of Science,Nanjing University of Science and Technology,Nanjing 210094,China
关键词:
干涉法测量 表面温度 气化速度 熔融喷溅
Keywords:
interferometry measurement surface temperature gasification rate melt splash
分类号:
TN305
DOI:
10.14177/j.cnki.32-1397n.2018.42.02.003
摘要:
研究了毫秒激光与硅靶相互作用后表面的蒸气速度和后表面温度变化。由实验得到了脉宽为1 ms、能量密度为5.82×103 J/cm2的激光与厚度为0.3 mm的硅靶相互作用过程的序列干涉图。观察该序列干涉图发现,激光辐射466 μs时,硅靶的前表面和后表面均产生了气化现象; 激光作用699 μs后,硅靶的前表面和后表面均有液态喷溅物出现。通过相邻两幅干涉图的干涉条纹位置变化及时间间隔,计算得到了激光辐射466~699 μs时后表面蒸气的膨胀速度为20.47±0.08 m/s。根据Rankine-Hugoniot关系、气体动力学理论以及Knudsen层的质量、动量、能量守恒方程,计算得到硅靶后表面附近的蒸气压强。考虑物质蒸气压强满足克拉伯龙—克劳修斯方程,计算得到激光作用466~699 μs时硅靶后表面的平均温度为3551.2±2 K,计算结果与文献基本吻合。最后,根据计算的温度分析了熔融喷溅的产生机理。
Abstract:
The steam velocity and temperature variations of the silicon plate after its interaction with the millisecond laser are studied. Sequence interference pictures of interaction between the 1 ms pulse width and 5.82×103 J/cm2 energy density laser and the 0.3 mm thickness silicon plate are obtained by experiments. These sequence interference pictures show that,after the silicon plate being irradiated by 466 μs,the gasification phenomenon is produced on the front and the back surfaces of the silicon plate; and after the silicon plate being irradiated 699 μs,there are melt splashes producing on the front and back surfaces of the silicon plate. According to the position change and the time interval of the interference fringes of two adjacent interference pictures,the gasification rate of the steam on the back surface after 466~699 μs laser irradiation is calculated(20.47±0.08 m/s). By using Rankine-Hugoniot relations,the kinetic theory of gases and the mass,momentum,energy conservation equation of the Knudsen layer,the vapor pressure of the back surface is obtained; And by the Clapeyron-Clausius equation,the temperature of the back surface of the silicon plate after 466~699 μs laser irradiation is calculated(3551.2±2 K),and the result is consistent with that of the literature. Finally,the mechanism of molten splash is analyzed through the calculated temperature.

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备注/Memo

备注/Memo:
收稿日期:2016-10-09 修回日期:2017-05-31
基金项目:中央高校基本科研业务费专项资金资助项目(30920130123001)
作者简介:张梁(1980-),男,博士生,主要研究方向:毫秒激光与材料相互作用机理,E-mail:abcd36141@163.com; 通讯作者:倪晓武(1955-),男,博士,教授,博士生导师,主要研究方向:激光与物质相互作用机理及测试方法的理论与实验,E-mail:nxw@njust.edu.cn。
引文格式:张梁,倪晓武,陆建. 毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量[J]. 南京理工大学学报,2018,42(2):148-154.
投稿网址:http://zrxuebao.njust.edu.cn
更新日期/Last Update: 2018-04-30